Title :
An 8-bit, 2 gigasample per second analog to digital converter
Author :
Nary, K.R. ; Nubling, R. ; Beccue, S. ; Colleran, W.T. ; Penney, J. ; Keh-Chung Wang
Author_Institution :
Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
We report on an 8-bit, 2 gigasample per second analog to digital converter (ADC) fabricated in an AlGaAs-GaAs heterojunction bipolar transistor (HBT) process. The ADC utilizes a folding and interpolation architecture to provide wide bandwidth with a moderate device count. When sampling at 2 gigasamples per second (GS/s), the ADC has demonstrated an effective resolution of between 6.5 and 7.0 effective bits for analog inputs between DC and 1.5 GHz and a single tone spurious free dynamic range of 48 dB at Nyquist. The ADC incorporates over 2500 transistors and dissipates 5.3 Watts from 5.0 V and -5.2 V supplies.
Keywords :
III-V semiconductors; aluminium compounds; analogue-digital conversion; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; interpolation; -5.2 V; 0 to 1.5 GHz; 5 V; 5.3 W; 8 bit; A/D convertor; AlGaAs-GaAs; HBT process; analog to digital converter; folding architecture; heterojunction bipolar transistor; interpolation architecture; monolithic ADC; Analog-digital conversion; Bandwidth; Capacitance; Circuit simulation; Circuit synthesis; Driver circuits; Heterojunction bipolar transistors; Latches; Sampling methods; Testing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.529016
