DocumentCode
1943109
Title
Non-Destructive Characterisation of Device Processing of Silicon-on-Sapphire (SOS) Wafers
Author
Pickering, C. ; Sharma, S. ; Collins, S. ; Morpeth, A.G. ; Terry, G.R. ; Hodge, A.M.
Author_Institution
Royal Signals and Radar Establishment, St Andrews Road, Malvern, GB-Worcs WR14 3PS, Great-Britain
fYear
1988
fDate
13-16 Sept. 1988
Abstract
Spectrosopic ellipsometry has been used to obtain microstructural and layer thickness information from processed SOS wafers consisting of poly-Si/gate oxide/epi-Si/sapphire structures. Oxide thickness and interface roughness increased for 0.1 ¿m SOS wafers. Poly-Si formed by annealing ¿-Si deposited layers had the best dielectric function and similar structure and thicknesses were obtained on bulk and SOS wafers.
Keywords
Annealing; Doping; Ellipsometry; Furnaces; Grain size; Oxidation; Rough surfaces; Spectroscopy; Surface roughness; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436840
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