LT-GaAs-MIS-diode characteristics and equivalent circuit model

Author

Lipka, K.-M. ; Splingart, B. ; Erben, U. ; Kohn, E.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

fYear

1993

fDate

2-4 Aug 1993

Firstpage

103

Lastpage

110

Abstract

LT-GaAs MISFETs had been realized indicating a record 2.7 W/mm RF power handling capability. To optimize such LT-GaAs power MISFET structures, the MIS system containing a LT-GaAs insulator and an AlAs interfacial diffusion barrier to the channel has been analysed. A noticeable parallel conductance was found in the insulator which is thought to be one of the key parameters to realize high gate to drain breakdown voltages. This conductivity however leads also to a g_m-dispersion in the MHz range. Locus-curves of this system demonstrate a higher resistivity in the AlAs layer than in the LT-GaAs layer, indicating that the simple model of a single lossy capacitance does not describe the MIS diode completely. An extended electronic equivalent circuit for use in the FET model has been established

Keywords

equivalent circuits; gallium arsenide; insulated gate field effect transistors; power transistors; semiconductor device models; FET model; GaAs; RF power handling capability; electronic equivalent circuit; equivalent circuit model; gate to drain breakdown voltages; locus-curves; low-temperature GaAs power MISFET structures; parallel conductance; single lossy capacitance; Breakdown voltage; Conductivity; Dielectrics and electrical insulation; Doping; Equivalent circuits; FETs; Gallium arsenide; MISFETs; Radio frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303075

Filename

303075