• DocumentCode
    1943122
  • Title

    GaAs multibit delta-sigma A/D converters based upon a new comparator design

  • Author

    Hickling, R.M. ; Yagi, M.N. ; Salman, H.H.

  • Author_Institution
    TechnoConcepts Inc., Newbury Park, CA, USA
  • fYear
    1995
  • fDate
    Oct. 29 1995-Nov. 1 1995
  • Firstpage
    307
  • Lastpage
    310
  • Abstract
    In this paper, the design of multibit delta-sigma converters based upon a new comparator bank structure is described. The comparator bank approach eliminates the need for comparator threshold terminals, allowing each of the individual latched comparators to operate upon the same differential input signal. This new comparator design was incorporated into a complete four-bit delta-sigma modulator which was fabricated on a 0.6 /spl mu/m GaAs MESFET process.
  • Keywords
    III-V semiconductors; MESFET integrated circuits; comparators (circuits); gallium arsenide; sigma-delta modulation; 0.6 micron; 1.6 GHz; 4 bit; A/D converters; GaAs; GaAs MESFET process; comparator bank structure; differential input signal; four-bit delta-sigma modulator; multibit delta-sigma ADC; Circuit testing; Current control; Delta modulation; Dynamic range; Gallium arsenide; Linearity; Tail; Threshold voltage; Virtual colonoscopy; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
  • Conference_Location
    San Diego, CA, USA
  • Print_ISBN
    0-7803-2966-X
  • Type

    conf

  • DOI
    10.1109/GAAS.1995.529017
  • Filename
    529017