• DocumentCode
    1943148
  • Title

    Effects of Mechanical Stress on MOS Structures with TiSi2 Gates

  • Author

    Reuters, P.J. ; Giese, J. ; Offenberg, M. ; Richter, W. ; Ewert, S. ; Balk, P.

  • Author_Institution
    Inst. of Semiconductor Electronics and Inst. of Physics, Technical University Aachen, D-5100 Aachen, F.R.G.
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    MOS capacitors with TiSi2 gate electrode show electron trapping, interface state generation upon electron injection and reduction of breakdown strength; these effects become more pronounced for electrodes with increasing thickness. Evidence is presented that this degradation of the insulator is due to mechanical stress in the MOS system caused by the gate.
  • Keywords
    Compressive stress; Degradation; Electric breakdown; Electrodes; Electron traps; Insulation; Interface states; MOS capacitors; Semiconductor films; Silicides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436842
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1943148