DocumentCode
1943181
Title
Generation Lifetime and Hold Time of Small MOS Devices
Author
Pearce, N.O. ; Peaker, A.R. ; Hamilton, B.
Author_Institution
Centre for Electronic Materials and the Departrment of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, GB-Manchester M60 1QD, Great-Britain; Bio-Rad Laboratories, 780 Montague Expressway, Su
fYear
1988
fDate
13-16 Sept. 1988
Abstract
A new method for characterising inversion transients in metal-oxide-semiconductor devices is reported. The technique uses Isothermal Deep Level Transient Spectroscopy to separate generation currents from various sources. The combination of activation graphs with Zerbst plots gives a complete characterisation of devices with dimensions down to sub-micron levels.
Keywords
1f noise; Capacitance measurement; Capacitors; Character generation; Distortion measurement; Isothermal processes; MOS devices; Spectroscopy; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436844
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