High speed optical detectors for monolithic millimeter wave integrated circuits

Author

Litvin, K. ; Burm, J. ; Woodard, D. ; Schaff, W. ; Eastman, L.F.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

1993

fDate

2-4 Aug 1993

Firstpage

131

Lastpage

140

Abstract

Metal-semiconductor-metal photodiodes with interdigitated Schottky barrier fingers are being developed for applications in monolithic optical receiver circuits with the purpose of detecting millimeter wave modulation signals being transmitted via an optical carrier. The devices are planar and incorporate submicron finger spacings and a thin absorption region for speed with a buried stack of tuned Bragg reflectors for enhanced sensitivity at the carrier wavelength. These devices are being integrated with short-gate MODFET amplifiers to form the complete monolithic integrated optical receiver circuit

Keywords

MMIC; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; photodiodes; 40 GHz; MSM photodiodes; high speed optical detectors; interdigitated Schottky barrier fingers; metal-semiconductor-metal photodiodes; millimeter wave integrated circuits; millimeter wave modulation signals; monolithic MM-wave ICs; monolithic optical receiver circuits; optical carrier; short-gate MODFET amplifiers; tuned Bragg reflectors; Fingers; High speed optical techniques; MIMICs; MODFET circuits; Millimeter wave circuits; Optical detectors; Optical receivers; Photodiodes; Schottky barriers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303078

Filename

303078