Dynamically stable polarization characteristics of oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrate

Author

Takahashi, M. ; Egami, N. ; Mizutani, A. ; Matsutani, A. ; Koyama, F. ; Iga, K.

Author_Institution

ATR Adaptive Commun. Res. Lab., Kyoto, Japan

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

35

Lastpage

36

Abstract

We experimentally demonstrated that the polarization mode of a VCSEL can be well controlled even under direct modulation by using the optical anisotropy of (n11)-oriented QWs. A schematic diagram is shown of a (311)A-oriented VCSEL with an oxide confinement structure. The epitaxial layer was grown on a GaAs(311)A substrate by molecular beam epitaxy. The active region consists of In/sub 0.2/Ga/sub 0.8/As double quantum wells centered in a single-wavelength-thick Al/sub 0.5/Ga/sub 0.5/As cavity. The upper and bottom DBR mirrors consist of a 25- and 22.5-pair AlAs/GaAs quarter-wave stack, respectively. A typical L-I characteristic is shown under continuous wave (CW) operation at 25/spl deg/C. The threshold current is 1.0 mA, and the lasing wavelength is around 990 nm.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser stability; light polarisation; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; surface emitting lasers; (n11)-oriented QW; 1.0 mA; 25 degC; 990 nm; Al/sub 0.5/Ga/sub 0.5/As; AlAs-GaAs; AlAs/GaAs quarter-wave stack; CW; DBR mirrors; GaAs; GaAs(311)A substrate; In/sub 0.2/Ga/sub 0.8/As; In/sub 0.2/Ga/sub 0.8/As double quantum wells; L-I characteristic; VCSEL; continuous wave operation; direct modulation; dynamically stable polarization characteristics; epitaxial layer; lasing wavelength; molecular beam epitaxy; optical anisotropy; oxide-confinement vertical-cavity surface-emitting lasers; polarization mode; single-wavelength-thick Al/sub 0.5/Ga/sub 0.5/As cavity; threshold current; Anisotropic magnetoresistance; Distributed Bragg reflectors; Epitaxial layers; Geometrical optics; Molecular beam epitaxial growth; Optical control; Optical modulation; Optical polarization; Substrates; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619093

Filename

619093