DocumentCode :
1943213
Title :
[Title page]
fYear :
2009
fDate :
9-11 Sept. 2009
Firstpage :
1
Lastpage :
1
Abstract :
The following topics are dealt with: technology projection; atomic scale simulation; surface phenomena thin film growth; scaled nonvolatile memories; power device TCAD; stress effects; quantum effects; fluctuations; compact models; advanced models; interconnects; nanoscale devices; reliability; mobility; and transport.
Keywords :
random-access storage; reliability; technology CAD (electronics); thin films; advanced models; atomic scale simulation; compact models; fluctuations; interconnects; mobility; nanoscale devices; power device TCAD; quantum effects; reliability; scaled nonvolatile memories; stress effects; surface phenomena thin film growth; technology projection; transport;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
ISSN :
1946-1569
Print_ISBN :
978-1-4244-3974-8
Type :
conf
DOI :
10.1109/SISPAD.2009.5290188
Filename :
5290188
Link To Document :
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