Abstract :
The following topics are dealt with: technology projection; atomic scale simulation; surface phenomena thin film growth; scaled nonvolatile memories; power device TCAD; stress effects; quantum effects; fluctuations; compact models; advanced models; interconnects; nanoscale devices; reliability; mobility; and transport.
Keywords :
random-access storage; reliability; technology CAD (electronics); thin films; advanced models; atomic scale simulation; compact models; fluctuations; interconnects; mobility; nanoscale devices; power device TCAD; quantum effects; reliability; scaled nonvolatile memories; stress effects; surface phenomena thin film growth; technology projection; transport;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
DOI :
10.1109/SISPAD.2009.5290188