Title :
High frequency performance of GaAs/AlGaAs multiple quantum well (MQW) Asymmetric Fabry Perot (ASFP) reflection modulator
Author :
Nawaz, M. ; Olsen, B.T. ; McIlvaney, K.
Author_Institution :
UNIK Centre for Technol., Kjeller, Norway
Abstract :
We report the high frequency performance of GaAs/AlGaAs multiple quantum well (MQW) based Asymmetric Fabry Perot (ASFP) reflection modulator. The measured frequency response bandwidth of the modulator was ~600 MHz at an applied voltage of only 5 V at a wavelength of ~854 nm
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; frequency response; gallium arsenide; light reflection; molecular beam epitaxial growth; optical modulation; semiconductor quantum wells; 5 V; 600 MHz; 854 nm; GaAs-AlGaAs; MQW optical modulator; asymmetric Fabry Perot reflection modulator; frequency response bandwidth; high frequency performance; multiple quantum well; Dielectric substrates; Frequency; Gallium arsenide; Mirrors; Optical modulation; Optical reflection; Quantum well devices; Reflectivity; Semiconductor device doping; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303080
