DocumentCode
1943242
Title
High frequency performance of GaAs/AlGaAs multiple quantum well (MQW) Asymmetric Fabry Perot (ASFP) reflection modulator
Author
Nawaz, M. ; Olsen, B.T. ; McIlvaney, K.
Author_Institution
UNIK Centre for Technol., Kjeller, Norway
fYear
1993
fDate
2-4 Aug 1993
Firstpage
148
Lastpage
151
Abstract
We report the high frequency performance of GaAs/AlGaAs multiple quantum well (MQW) based Asymmetric Fabry Perot (ASFP) reflection modulator. The measured frequency response bandwidth of the modulator was ~600 MHz at an applied voltage of only 5 V at a wavelength of ~854 nm
Keywords
III-V semiconductors; aluminium compounds; electro-optical devices; frequency response; gallium arsenide; light reflection; molecular beam epitaxial growth; optical modulation; semiconductor quantum wells; 5 V; 600 MHz; 854 nm; GaAs-AlGaAs; MQW optical modulator; asymmetric Fabry Perot reflection modulator; frequency response bandwidth; high frequency performance; multiple quantum well; Dielectric substrates; Frequency; Gallium arsenide; Mirrors; Optical modulation; Optical reflection; Quantum well devices; Reflectivity; Semiconductor device doping; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location
Ithaca, NY
Print_ISBN
0-7803-0894-8
Type
conf
DOI
10.1109/CORNEL.1993.303080
Filename
303080
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