Title :
Oxidation Induced Local Channel Dopant Accumulation
Author :
Mazuré, C. ; Orlowski, M.
Author_Institution :
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, West-Germany
Abstract :
The influence of the reoxidation after gate patterning on NMOS transistor characteristics is investigated. As the channel length LG is reduced the devices exhibit a reoxidation related VT increase. This VT variation is explained by a non-uniform oxidation enhanced diffusion of the channel dopant along the channel.
Keywords :
Boron; Doping; Etching; Fabrication; Implants; MOSFETs; Oxidation; Research and development; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
