Title :
Full Quantum Investigation of Low Field Mobility in Short-Channel Silicon Nanowire FETS
Author :
Poli, Stefano ; Pala, Marco G.
Author_Institution :
Adv. Res. Center on Electron. Syst., Univ. of Bologna, Bologna, Italy
Abstract :
A computational study on short-channel silicon nanowire-FETs is proposed by means of a 3-D full-quantum treatment within the coupled mode space non-equilibrium Green´s function formalism. Electron-phonon interaction and surface roughness are considered as limiting scattering mechanisms. The dependence of the effective mobility on the channel length is addressed showing the importance of quantum-phase coherence in ultra-scaled devices and analyzing the impact of the different scattering mechanisms. The scaling trends for the back-scattering coefficient is also investigated.
Keywords :
Green´s function methods; electron-phonon interactions; elemental semiconductors; field effect transistors; nanowires; semiconductor device models; semiconductor quantum wires; silicon; surface roughness; FET; back-scattering coefficient; coupled mode space non-equilibrium Green function; electron-phonon interaction; low field mobility; quantum-phase coherence; silicon nanowire; surface roughness; Collision mitigation; Electrons; FETs; Fluctuations; Optical scattering; Particle scattering; Phonons; Rough surfaces; Silicon; Surface roughness;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290193
