On the feasibility of intersubband transition lasers

Author

Afzali-Kushaa, A. ; Haddad, G.I. ; Norris, T.B.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1993

fDate

2-4 Aug 1993

Firstpage

167

Lastpage

176

Abstract

The feasibility and potential of laser sources based on intersubband transitions in quantum wells and strained layers will be presented. The basic schemes and proposed structures for both electrically and optically pumped devices are discussed. Both conduction band and valence band quantum wells as well as strained layers may be used as the active layer of these lasers. These sources can be either optically or electrically pumped with each having its own advantages. Various material systems which are appropriate for these applications will be described

Keywords

laser theory; laser transitions; optical pumping; semiconductor lasers; active layer; conduction band; electrically pumped devices; intersubband transition lasers; laser sources; material systems; optically pumped devices; quantum wells; strained layers; valence band quantum wells; Carrier confinement; Infrared detectors; Laser transitions; Lattices; Optical materials; Optical modulation; Optical pumping; Pump lasers; Quantum well lasers; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303083

Filename

303083