Title :
Monte Carlo Study of Ambipolar Transport and Quantum Effects in Carbon Nanotube Transistors
Author :
Nguyen, Huu Nha ; Retailleau, Sylvie ; Querlioz, Damien ; Bournel, Arnaud ; Dollfus, Philippe
Author_Institution :
CNRS, Univ. Paris-Sud, Orsay, France
Abstract :
In this paper, we investigate the device operation of CNFETs using Monte Carlo simulation. Two types of contacts (ohmic and Schottky) are considered and the effect of ambipolar transport with Schottky barriers is analysed. We also discuss the actual influence of quantum effects on the basis of Wigner simulation results. The output and high-frequency characteristics of different structures are presented and discussed.
Keywords :
Monte Carlo methods; Schottky barriers; carbon nanotubes; elemental semiconductors; field effect transistors; ohmic contacts; C; Monte Carlo study; Schottky barriers; Schottky contact; Wigner simulation; ambipolar transport; carbon nanotube field effect transistors; ohmic contact; quantum effects; Acoustic scattering; Carbon nanotubes; Equations; MOSFETs; Monte Carlo methods; Ohmic contacts; Optical scattering; Particle scattering; Phonons; Schottky barriers;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290195
