Title :
An Improved Fully CMOS Compatible Bipolar Structure
Author :
Gerodolle, A. ; Giroult, G. ; Martin, S. ; Nouailhat, A.
Author_Institution :
CNET/CNS, BP 98, Chemin du Vieux Ch?ne, F-38243 Meylan Cedex, France
Abstract :
A fully CMOS compatible bipolar technology is studied. 2-D process simulations of the device have been carried out before wafer processing ; comparisons of the results with experiments are presented. A new idea for making the collector, without standard epitaxy of a highly doped buried layer, is described. The 2-D simulation results enable the advantages to be checked with regard to the classical approach.
Keywords :
BiCMOS integrated circuits; Boron; CMOS process; CMOS technology; Chemical technology; Doping; Epitaxial growth; Etching; Implants; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
