Title :
Adding Physical Scalability to BSIM4 by Meta-Modeling of Fitting Parameters
Author :
Nagumo, Toshiharu ; Takeuchi, Kiyoshi ; Kumashiro, Shigetaka ; Hayashi, Yoshihiro
Author_Institution :
LSI Fundamental Res. Lab., NEC Electron. Corp., Sagamihara, Japan
Abstract :
A new approach for improving physical scalability of existing compact models is proposed. The behavior of internal BSIM4 model parameters in response to a change in fabrication process condition is modeled by physics-based meta-model equations. By recovering missing links between the fitting parameters and device design parameters, the model parameter sets for variant transistors with different channel implant dose can be predicted starting from a parameter set of existing reference transistors.
Keywords :
MOSFET; semiconductor device models; MOSFET compact model; channel implant dose; fitting parameters; internal BSIM4 model parameters; physical scalability; physics-based metamodel equations; variant transistors; CMOS technology; Equations; Fabrication; Impurities; MOSFETs; Metamodeling; Predictive models; Scalability; Semiconductor device modeling; Transistors;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290197