Adding Physical Scalability to BSIM4 by Meta-Modeling of Fitting Parameters

Author

Nagumo, Toshiharu ; Takeuchi, Kiyoshi ; Kumashiro, Shigetaka ; Hayashi, Yoshihiro

Author_Institution

LSI Fundamental Res. Lab., NEC Electron. Corp., Sagamihara, Japan

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

1

Lastpage

4

Abstract

A new approach for improving physical scalability of existing compact models is proposed. The behavior of internal BSIM4 model parameters in response to a change in fabrication process condition is modeled by physics-based meta-model equations. By recovering missing links between the fitting parameters and device design parameters, the model parameter sets for variant transistors with different channel implant dose can be predicted starting from a parameter set of existing reference transistors.

Keywords

MOSFET; semiconductor device models; MOSFET compact model; channel implant dose; fitting parameters; internal BSIM4 model parameters; physical scalability; physics-based metamodel equations; variant transistors; CMOS technology; Equations; Fabrication; Impurities; MOSFETs; Metamodeling; Predictive models; Scalability; Semiconductor device modeling; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on

Conference_Location

San Diego, CA

ISSN

1946-1569

Print_ISBN

978-1-4244-3974-8

Electronic_ISBN

1946-1569

Type

conf

DOI

10.1109/SISPAD.2009.5290197

Filename

5290197