Study of shot noise in a double barrier resonant tunneling structure

Author

Jahan, M.M. ; Anwar, A.F.M.

Author_Institution

Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA

fYear

1993

fDate

2-4 Aug 1993

Firstpage

189

Lastpage

193

Abstract

Shot noise is calculated in a double barrier resonant tunneling structure (DBRTS) by taking the space charge accumulated inside the quantum well into account. The calculation is self-consistent in nature and is obtained by simultaneously solving the Schrodinger and Poisson´s equations. The calculation manifests the suppression of shot noise in the positive differential resistance (PDR) region and an enhancement in the negative differential resistance region (NDR) of the DBRTS. The behavior is explained in terms of the fluctuation of the eigen energy of the structure due to the stored charge in the quantum well

Keywords

Schrodinger equation; eigenvalues and eigenfunctions; random noise; resonant tunnelling devices; semiconductor device noise; semiconductor quantum wells; space charge; Poisson´s equations; Schrodinger equations; double barrier resonant tunneling structure; eigen energy; fluctuation; negative differential resistance region; positive differential resistance; quantum well; self-consistent; shot noise; space charge; stored charge; Acoustical engineering; Current density; Electrons; Energy states; Fluctuations; Poisson equations; Resonant tunneling devices; Space charge; Systems engineering and theory;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303086

Filename

303086