Title :
High-Speed Optical Detection Up to 2.5Gbit/s with a Double Polysilicon Self-Aligned Silicon Bipolar Transistor
Author :
Bock, W. ; Treitinger, L. ; Prettl, W.
Author_Institution :
Siemens AG, Zentrale Forschung und Entwicklung, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, F.R.G.
Abstract :
The photo response of a standard high-speed self-aligned silicon bipolar transistor has been investigated. The photosignal of the base-collector diode is found lo con sist of at least two current components. Optical detection capabilities are demonstrated by excitation with modulated laser light at 830nm wavelength up to data rates of 2.5Gbit/s.
Keywords :
Bipolar transistors; High speed optical techniques; Laser excitation; Optical detectors; Optical modulation; Optical pulse shaping; Optical sensors; Photoconductivity; Semiconductor diodes; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
