Observation of extremely large sheet hole densities in uncapped undoped AlSb layers

Author

Tadayon, Bijan ; Kyono, Carl S. ; Godbey, David J. ; Tadayon, Saied ; Mittereder, Jeffrey A.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

1993

fDate

2-4 Aug 1993

Firstpage

203

Lastpage

211

Abstract

In this paper, we present a study of the electrical and physical properties of uncapped AlSb, grown by molecular beam epitaxy. Large concentrations of oxygen have been observed in the uncapped undoped AlSb layers, resulting in extremely large sheet hole densities (as high as 3×10¹⁵ cm^-2 with the corresponding mobilities of about 60 cm²V^-1s^-1). However, for the AlSb layers capped with 50 Å of GaSb, oxygen does not penetrate beyond the GaSb cap layer, and the underlying AlSb layer is highly resistive. X-ray photoelectron spectroscopy (XPS) has been used to analyze the surface oxides for the uncapped AlSb layers. Three different oxides have been observed on the surface of the uncapped layers: Al₂O₃, Sb₂O₅, and Sb ₂O₃

Keywords

III-V semiconductors; X-ray photoelectron spectra; aluminium compounds; carrier density; carrier mobility; electronic conduction in crystalline semiconductor thin films; molecular beam epitaxial growth; oxidation; semiconductor epitaxial layers; Al₂O₃-AlSb; AlSb; GaSb cap layer; GaSb-AlSb; MBE; Sb₂O₃-AlSb; Sb₂O₅-AlSb; X-ray photoelectron spectroscopy; XPS; electrical properties; mobilities; molecular beam epitaxy; physical properties; sheet hole densities; surface oxides; uncapped undoped AlSb layers; Chemicals; Gallium arsenide; Heterojunctions; Laboratories; Molecular beam epitaxial growth; Plasma measurements; Spectroscopy; Substrates; Surface cleaning; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303088

Filename

303088