Statistical modeling of pseudomorphic HEMTs from automated noise and scattering parameter measurements

Author

Caddemi, A. ; Martines, G. ; Sannino, M.

Author_Institution

Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy

fYear

1993

fDate

2-4 Aug 1993

Firstpage

212

Lastpage

218

Abstract

A method for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters using a computer-controlled noise figure measuring set-up only is presented. A modeling procedure exploiting both scattering and noise parameters has been employed to extract the equivalent circuit which gives the best fit of the experimental data. Results are reported concerning the complete characterization and modeling of a series of ten pseudomorphic HEMTs in the 8-16 GHz range

Keywords

S-parameters; automatic testing; electric noise measurement; equivalent circuits; high electron mobility transistors; microwave measurement; semiconductor device models; semiconductor device noise; semiconductor device testing; solid-state microwave devices; statistical analysis; 8 to 16 GHz; automated noise parameter measurements; computer-controlled noise figure measuring set-up; equivalent circuit; gain parameters; microwave transistors; pseudomorphic HEMTs; scattering parameter measurements; statistical modeling; Circuit noise; Data mining; Gain measurement; Microwave measurements; Microwave theory and techniques; Microwave transistors; Noise figure; Noise measurement; PHEMTs; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303089

Filename

303089