Fabrication, performance and characterization of Si delta-doped FET grown by MBE

Author

Chen, Q. ; Willander, M.

Author_Institution

Div. of Electron. Devices, Linkoping Univ., Sweden

fYear

1993

fDate

2-4 Aug 1993

Firstpage

228

Lastpage

235

Abstract

Si delta-doped FETs have been fabricated using low-energy Sb ion doping technique during Si MBE growth to realize delta-doping and a low temperature device processing budget. The FETs with a gate length of 2 μm showed a gate breakdown voltage of 3.8-4.7 V and a maximum extrinsic transconductance of 28 mS/mm, corresponding to an intrinsic transconductance of 42 mS/mm. Those results are the best reported so far in Si δ-FETs of similar gate length. The gate charge-control and low-field drift-mobility in Si δ-FETs were measured using C-V and I-V techniques. Measured charge-control had a strong nonlinearity and was in good agreement with theoretical calculation. We observed, for the first time, that the drift-mobility in the delta-doped FET was decreased with the increasing gate voltage

Keywords

Schottky gate field effect transistors; antimony; carrier mobility; characteristics measurement; elemental semiconductors; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; silicon; 2 micron; 3.8 to 4.7 V; C-V techniques; I-V techniques; MBE; MESFETs; Si:Sb; Si:Sb δ-FETs; delta-doped FET; device processing budget; gate breakdown voltage; gate charge-control; gate length; low-energy ion doping technique; low-field drift-mobility; maximum extrinsic transconductance; Capacitance-voltage characteristics; Current measurement; Doping; FETs; Fabrication; MESFETs; Molecular beam epitaxial growth; Substrates; Temperature; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303091

Filename

303091