DocumentCode :
1943508
Title :
Silicon Selective and Lateral Overgrowth Epitaxy : Growth and Electrical Evaluation for Devices
Author :
Friedrich, J. ; Neudeck, G.W. ; Liu, S.T.
Author_Institution :
School of Electrical Engineering, Purdue University, West Lafayette, IN 47906, U.S.A.
fYear :
1988
fDate :
13-16 Sept. 1988
Abstract :
Selective epitaxial garowth of monocrystalline silicon and epitaxial lateral overgrowth have emerged as important processing steps for advanced processing technologies, The problems associated with these steps, such as deposition non-uniformity, material quality, and masking oxide deterioration have been investigatted. Devices have been built to evaluate the epitaxially grown material with respect to its suitability for circuit fabrication. The results give fundamental criteria that can be used in any kind of reactor system to achieve good quality selective epitaxy.
Keywords :
Circuits; Distributed control; Epitaxial growth; Fabrication; Human computer interaction; Inductors; Random access memory; Silicon; Temperature; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
Print_ISBN :
2868830994
Type :
conf
Filename :
5436858
Link To Document :
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