DocumentCode
1943523
Title
OSIRIS II, A Two-Dimensional Process Simulator for SIMOX Structures
Author
Sweid, I. ; Guillemot, N. ; Kamarinos, G.
Author_Institution
INPG/ENSERG, Laboratoire de Physique des Composants a Semiconducteurs, CNRS-UA 840, 23, Av. des Martyrs, F-38031 Grenoble Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
The simulation of technological processes is very important for the fabrication of integrated circuits. In this paper, the authors present OSIRIS II for the simulation on SIMOX structures. The program takes into account the limiting conditions associated with this material. The models used are briefly recalled. Finally, a complete simulation of an N-MOS device on SIMOX is presented.
Keywords
Analytical models; Boron; Circuit simulation; Fabrication; Impurities; Integrated circuit technology; Nonlinear equations; Resists; Resumes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436859
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