Title :
Semiclassical Monte Carlo with Quantum-Confinement Enhanced Scattering: Quantum Correction and Application to Short-Channel Device Performance Vs. Mobility for Biaxial-Tensile-Strained Silicon nMOSFETs
Author :
Shi, Ningyu ; Register, Leonard F. ; Banerjee, Sanjay K.
Author_Institution :
Dept. of ECE, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
A model of valley-dependent quantum-confinement-enhanced scattering has been added to existing quantum corrections in our full band Monte Carlo simulator, Monte Carlo of the University of Texas (MCUT). The simulator was then calibrated to fit mobility curves, both strained and unstrained, by adjusting surface roughness parameters. By comparing mobility and device simulation results, we find significant deviations in short channel strained Si nMOSFET performance - some potentially beneficial - from expectations based on mobility and thermal velocity alone.
Keywords :
MOSFET; Monte Carlo methods; elemental semiconductors; semiconductor device models; silicon; Si; biaxial-tensile-strained silicon nMOSFET; mobility curves; quantum correction; quantum-confinement enhanced scattering; semiclassical Monte Carlo; short-channel device performance; surface roughness parameters; Brillouin scattering; Capacitive sensors; Conductivity; Effective mass; MOSFETs; Monte Carlo methods; Particle scattering; Potential well; Quantum mechanics; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290202
