Title :
Electronic Properties of Silicon Interfaces Prepared by Direct Bonding
Author :
Bengtsson, S. ; Engström, O.
Author_Institution :
Chalmers University of Technology, Department of Solid State Electronics, S-412 96 Göteborg, Sweden
Abstract :
The influence of interface charges on the properties of Si-Si and Si-SiO2 interfaces prepared by direct bonding has been investigated. Surface potentials of N-N and P-P interfaces and recombination currents in P-N junctions depend on surface and heat treatments. In both cases lower magnitudes were measured in samples pre-treated in HF compared to samples pre-treated in HNO3. Bonded Si-SiO2 interfaces with interface state densities of about 1011 cm¿2 eV¿1 and low flatband voltages have been achieved.
Keywords :
Annealing; Conductivity; Electrical resistance measurement; Fixtures; Furnaces; Silicon; Spontaneous emission; Surface treatment; Temperature; Wafer bonding;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
