DocumentCode
1943558
Title
Design of a 1600 V Power Bipolar Mode FET (BMFET)
Author
Spirito, P. ; Vitale, G. ; Busatto, G. ; Ferla, G. ; Musumeci, S.
Author_Institution
Dept.Ingegneria Elettronica University of Napoli, via Claudio 21, 80125 Napoli - Italy
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
61
Lastpage
64
Abstract
The design, the fabrication and the characterization of a BMFET (Bipolar Mode FET) with a maximum voltage of 1600 V and maximum current of 5 A (at hFS = 2.5) are reported. With the help of theoretical models, the effects of physical and geometrical parameters on the performance of the device are investigated and the rules to be used in the design are defined. The switching characteristics of the fabricated devices show that the BMFET gives full Reverse Safe Operating Area and fall-time down to 30 ns on inductive load.
Keywords
Bonding; Doping; FETs; Fabrication; Geometry; MOSFET circuits; Packaging; Solid modeling; TV; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436861
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