Title :
A new resonant tunneling transistor fabricated by cleaved edge overgrowth
Author :
Kurdak, Ç ; Tsui, D.C. ; Parihar, S. ; Manoharan, H. ; Lyon, S.A. ; Shayegan, M.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; hot electron transistors; integrated logic circuits; molecular beam epitaxial growth; negative resistance; resonant tunnelling devices; semiconductor growth; GaAs-AlGaAs; cleaved edge overgrowth; high speed logic circuits; molecular beam epitaxial growth; negative differential resistance; negative transconductance behavior; positive transconductance behavior; resonant tunneling transistor; three-terminal transistor; CMOS technology; Electrons; Fabrication; Gallium arsenide; Molecular beam epitaxial growth; Resonant tunneling devices; Substrates; Transconductance; Ultra large scale integration; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303095
