A new resonant tunneling transistor fabricated by cleaved edge overgrowth

Author

Kurdak, Ç ; Tsui, D.C. ; Parihar, S. ; Manoharan, H. ; Lyon, S.A. ; Shayegan, M.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

fYear

1993

fDate

2-4 Aug 1993

Firstpage

265

Lastpage

269

Abstract

A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits

Keywords

III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; hot electron transistors; integrated logic circuits; molecular beam epitaxial growth; negative resistance; resonant tunnelling devices; semiconductor growth; GaAs-AlGaAs; cleaved edge overgrowth; high speed logic circuits; molecular beam epitaxial growth; negative differential resistance; negative transconductance behavior; positive transconductance behavior; resonant tunneling transistor; three-terminal transistor; CMOS technology; Electrons; Fabrication; Gallium arsenide; Molecular beam epitaxial growth; Resonant tunneling devices; Substrates; Transconductance; Ultra large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303095

Filename

303095