DocumentCode
1943597
Title
Numerical Simulations to Improve the Accuracy of Electron-Beam Testing on Passivated Integrated Circuits
Author
Fremont, H. ; Touboul, A. ; Gobled, D. ; Danto, Y.
Author_Institution
Texas Instruments-France, BP 05, F-06270 Villeneuve Loubet, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
The Scanning Electron Microscope associated with a Voltage Contrast system is a contactless and non-destructive tool for the test of VLSI Circuits. Moreover, the potential of passivated tracks can be evaluated by Capacitive Coupling Voltage Contrast (CCVC). This paper presents a numerical simulation applied to improve the accuracy of CCVC measurements. Particularly, the role of the location of the beam, and the influence of the potential of the neighbouring tracks and of the extraction grid is studied.
Keywords
Circuit simulation; Circuit testing; Coupling circuits; Electron beams; Insulation life; Integrated circuit testing; Laplace equations; Numerical simulation; Scanning electron microscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436863
Link To Document