Title :
Reduced Dislocation Density in Simox Wafer by Multi-Energy Single Implantation
Author :
Hamaguchi, I. ; Fujita, T. ; Yano, T. ; Kajiyama, K.
Author_Institution :
Electronics Research Lab., Nippon Steel Corp., Japan
Keywords :
Annealing; Atmosphere; Conferences; Epitaxial growth; Etching; Silicon on insulator technology; Steel; Stress; Temperature;
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.1992.664772
