Title :
Effect of high field electron transport characteristics on transistor performance in InGaAs/InAlAs heterostructures
Author :
Zahurak, John ; Iliadis, Agis A. ; Rishton, Stephen A. ; Masselink, W. Ted
Author_Institution :
IBM Res. Div., T. J. Watson Res. Centre, Yorktown Heights, NY, USA
Abstract :
We have studied electron transport in a variety of doped and modulation-doped InGaAs/AlInAs quantum wells within the context of FET performance in devices fabricated from the same structures. Electron velocities in the structure were characterized using Hall, geometric magnetoresistance, and high-frequency velocity-field measurements. Peak velocities of 1.5×107 cm/s were measured for various delta-doped wells, while a peak velocity of 2.0×107 cm/s was measured for the MODFET structure. The effect of various well widths on the transport characteristics was also studied. FETs with 1.8 μm gate lengths and uniformly doped channels had transconductances of 267 mS/mm while the MODFET had gm=338 mS/mm. MODFETs with 0.5 μm gates yielded gm=590 mS/mm. In general, device performance was well correlated to the peak electron velocity and only somewhat correlated to the low-field mobility
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; doping profiles; field effect transistors; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor quantum wells; 0.5 micron; 1.8 micron; 267 mS/mm; 338 mS/mm; 590 mS/mm; FET performance; HEMT; HFET; Hall measurements; InGaAs-InAlAs; MODFET structure; delta-doped wells; geometric magnetoresistance measurements; heterostructures; high field electron transport characteristics; high-frequency velocity-field measurements; low-field mobility; modulation-doped quantum wells; peak electron velocity; transistor performance; uniformly doped channels; well widths; Conducting materials; Doping profiles; Electron mobility; Epitaxial layers; FETs; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Velocity measurement;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303096
