Title :
Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation
Author :
Sasso, G. ; Rinaldi, N. ; Matz, G. ; Jungemann, C.
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Univ. of Naples Federico II, Naples, Italy
Abstract :
Carrier mobility and energy relaxation time analytical models for hydrodynamic simulation of silicon-germanium hetero-junction bipolar transistors (HBTs) have been derived. In addition, some issues related to hydrodynamic simulation in commercial tools are discussed.
Keywords :
Ge-Si alloys; carrier mobility; heterojunction bipolar transistors; semiconductor device models; HBT; SiGe; carrier mobility; energy relaxation time model; hydrodynamic simulation; silicon-germanium hetero-junction bipolar transistor; Analytical models; Circuit simulation; Doping; Germanium silicon alloys; High definition video; Hydrodynamics; Lattices; Numerical simulation; Semiconductor process modeling; Silicon germanium;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290206
