DocumentCode
1943658
Title
A Microwave Method for Contactless Measurement of the Lifetime of Free Carriers in Silicon Wafers
Author
Otaredian, T. ; Middelhoek, S. ; Theunissen, M.J.J.
Author_Institution
Delft University of Technology, Department of Electrical Engineering, Electronic Instrumentation Laboratory, PO Box 5031, NL-2600 GA Delft, The Netherlands
fYear
1988
fDate
13-16 Sept. 1988
Abstract
Following an optical excitation of the free carriers in silicon wafers, their lifetimes are determined by measuring the reflected-microwave power. The relations of the lifetime with the light intensity of the optical source and with the parameters concerning the deep recombination centers in the bulk and at the surface of the wafer are discussed.
Keywords
Attenuators; Contamination; Electrical resistance measurement; Laboratories; Microwave measurements; Microwave theory and techniques; Pollution measurement; Power measurement; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436866
Link To Document