DocumentCode :
1943658
Title :
A Microwave Method for Contactless Measurement of the Lifetime of Free Carriers in Silicon Wafers
Author :
Otaredian, T. ; Middelhoek, S. ; Theunissen, M.J.J.
Author_Institution :
Delft University of Technology, Department of Electrical Engineering, Electronic Instrumentation Laboratory, PO Box 5031, NL-2600 GA Delft, The Netherlands
fYear :
1988
fDate :
13-16 Sept. 1988
Abstract :
Following an optical excitation of the free carriers in silicon wafers, their lifetimes are determined by measuring the reflected-microwave power. The relations of the lifetime with the light intensity of the optical source and with the parameters concerning the deep recombination centers in the bulk and at the surface of the wafer are discussed.
Keywords :
Attenuators; Contamination; Electrical resistance measurement; Laboratories; Microwave measurements; Microwave theory and techniques; Pollution measurement; Power measurement; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
Print_ISBN :
2868830994
Type :
conf
Filename :
5436866
Link To Document :
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