Title :
Trends in Indium Phosphide Microelectronics
Author_Institution :
Laboratoire de Bagneux, Centre National d´´Etudes des Télécommunications, 196, Av. Henri Ravera, F-92220 Bagneux, France
Abstract :
Together with 1,3 -1,5 ¿m optoelectronics, a microelectronic technology is presently developing on InP-based materials, owing to their remarkable transport properties. After general considerations on InP and GaInAs properties, various transistor structures are presented and their comparative merits discussed. This is followed by an analysis of current trends in technology and fields of applications.
Keywords :
Conducting materials; Electron mobility; FETs; Gallium arsenide; III-V semiconductor materials; Indium phosphide; MESFETs; Microelectronics; Optical materials; Photonic band gap;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
