DocumentCode
1943746
Title
Trends in Indium Phosphide Microelectronics
Author
Scavennec, A.
Author_Institution
Laboratoire de Bagneux, Centre National d´´Etudes des Télécommunications, 196, Av. Henri Ravera, F-92220 Bagneux, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
Together with 1,3 -1,5 ¿m optoelectronics, a microelectronic technology is presently developing on InP-based materials, owing to their remarkable transport properties. After general considerations on InP and GaInAs properties, various transistor structures are presented and their comparative merits discussed. This is followed by an analysis of current trends in technology and fields of applications.
Keywords
Conducting materials; Electron mobility; FETs; Gallium arsenide; III-V semiconductor materials; Indium phosphide; MESFETs; Microelectronics; Optical materials; Photonic band gap;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436870
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