Title :
Novel metal/2-DEG junction transistors
Author :
Peatman, W.C.B. ; Park, H. ; Gelmont, B. ; Shur, M. ; Maki, P. ; Brown, E.R. ; Rooks, M.J.
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
Abstract :
We present here the research on new metal/2-dimensional electron gas (2-DEG) Schottky contacts. This new high speed contact has unique characteristics which are particularly promising for applications in the fields of millimeter wave electronics and high speed, low power integrated circuits. We describe here two new transistors which utilize a side-gate formed by plating gate metal into a trench etched through the plane of the 2-DEG. The first transistor is the Schottky-gated resonant tunneling transistor (SG-RTT) which has demonstrated high transconductance and novel switching properties at room temperature. The second device is a novel 2-dimensional metal-semiconductor field effect transistor (2-D MESFET) which is particularly promising for low power, high speed integrated circuit applications. We also briefly discuss several applications of these new transistors
Keywords :
MMIC; Schottky gate field effect transistors; field effect integrated circuits; high electron mobility transistors; hot electron transistors; resonant tunnelling devices; solid-state microwave devices; Schottky contacts; Schottky-gated resonant tunneling transistor; high speed contact; high speed integrated circuits; metal/2-DEG junction transistors; millimeter wave electronics; side-gate; transconductance; two-dimensional metal-semiconductor field effect transistor; Electrons; Etching; FETs; Millimeter wave integrated circuits; Millimeter wave transistors; Power integrated circuits; Resonant tunneling devices; Schottky barriers; Temperature; Transconductance;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303101
