Title :
Effect of Impact-Ionization-Generated Holes on the Breakdown Mechanism in LDMOS Devices
Author :
Sakuda, T. ; Sadachika, N. ; Oritsuki, Y. ; Yokomichi, M. ; Miyake, M. ; Kajiwara, T. ; Kikuchihara, H. ; Feldmann, U. ; Mattausch, H.J. ; Miura-Mattausch, M.
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
The breakdown mechanism in LDMOS devices with high resistive drift region sustaining high-voltage applications is analyzed and explained. Holes generated by the impact-ionization in the drift region are found to hinder the formation of the breakdown condition by increasing the potential underneath the gate-overlap region. This mechanism is modeled and implemented into the compact model HiSIM_HV for circuit simulation. Good agreement of simulated characteristics with 2D-device simulation results has been achieved.
Keywords :
impact ionisation; power MOSFET; semiconductor device breakdown; semiconductor device models; 2D device simulation; LDMOS devices; MOSFET; breakdown mechanism; gate-overlap region; high-resistive drift region; high-voltage application; hole generation; impact ionization; Breakdown voltage; Circuit simulation; Electric breakdown; Impact ionization; Impurities; MOSFETs;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290211
