An Ultra High Speed Trench Isolated Double Polysilicon Bipolar Process

This paper describes a double polysilicon bipolar process incorporating a novel self-aligned emitter-base and deep trench isolation. The process has been designed primarily for ultra high speed by minimising parasitic capacitances, and also offers high packing densities. The performance of the technology is demonstrated by a 1/8 static divider operating at a frequency of 10.7GHz. Other representative SSI functions are also described.