Title :
120/spl deg/C pulsed operation from a 1.55 /spl mu/m vertical-cavity laser
Author :
Margalit, N. ; Yiljen Chiu ; Hegblom, E. ; Abraham, P. ; Black, A. ; Wesselmann, J. ; Bowers, J.E. ; Hu, E.L. ; Streubel, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Summary form only given. In this presentation we will focus on the design of InP-InGaAsP MQW vertical cavity lasers to achieve high temperature operation. We have concluded that the key to such design is the reduction of round trip cavity loss. We show the low loss double-fused laterally oxidized structure used in our work. This structure allows for high mirror reflectivities using GaAs based mirrors reducing the necessary gain at threshold.
Keywords :
III-V semiconductors; gallium arsenide; high-temperature techniques; indium compounds; laser cavity resonators; laser mirrors; laser transitions; optical losses; optical transmitters; quantum well lasers; 1.55 mum; 120 C; GaAs; GaAs based mirrors; InP-InGaAsP; InP-InGaAsP MQW vertical cavity laser design; high mirror reflectivities; high temperature operation; low loss double-fused laterally oxidized structure; optical transmitters; pulsed operation; round trip cavity loss; threshold laser gain; vertical-cavity laser; Fiber lasers; Gallium arsenide; Mirrors; Optical fiber communication; Optical fiber losses; Optical pulses; Propagation losses; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619097
