DocumentCode
1943802
Title
A Trench Isolated High Speed Bipolar Process for a 10K Gate, 950MHz, VLSI Circuit
Author
Mallardeau, C. ; Roche, M. ; Depey, M. ; Ova, F. Dell ; Thomas, D. ; Celi, D. ; Hunt, P. ; Hefner, A.
Author_Institution
SGS-Thomson Microelectronics, BP 217, F-38019 Grenoble Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
A one micron bipolar process using trench isolation and polysilicon emitter has been evaluated and characterised. The demonstration of yield was achieved on a 10000 gate VLSI circuit.
Keywords
Application software; Circuits; Etching; Isolation technology; Microelectronics; Oxidation; Parasitic capacitance; Planarization; Resists; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436872
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