A novel GaSb/AlSb/InAs high efficiency rectifying diode

Author

Ferro, Robert J. ; Robson, Ronald R. ; Hooper, William W. ; Hasenberg, Thomas C. ; Bailey, Leslie D. ; Newell, Scott M.

Author_Institution

Aerosp. Corp., Los Angeles, CA, USA

fYear

1993

fDate

2-4 Aug 1993

Firstpage

329

Lastpage

337

Abstract

We have fabricated a novel type of interband resonant tunnel diode by MBE growth of a superlattice, each period of which consists of layers of GaSb, AlSb and InAs. The diode is designed to conduct in forward bias by resonant interband tunneling, so that the entire stack appears to be a short circuit. Reverse bias current is impeded by band gap blocking. The reverse breakdown voltage varies with the number of periods, with each period capable of blocking about 0.4 V. A four period diode conducts 5000 A/cm² at less than 0.3 V of forward bias

Keywords

III-V semiconductors; aluminium compounds; electric breakdown of solids; gallium compounds; indium compounds; molecular beam epitaxial growth; negative resistance; resonant tunnelling devices; semiconductor superlattices; solid-state rectifiers; tunnel diodes; GaSb-AlSb-InAs; MBE growth; band gap blocking; forward bias; high efficiency diode; rectifying diode; resonant interband tunneling; resonant tunnel diode; reverse bias current; reverse breakdown voltage; superlattice; Charge carrier processes; Photonic band gap; Postal services; Radiative recombination; Resonance; Resonant tunneling devices; Schottky diodes; Spontaneous emission; Superlattices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303103

Filename

303103