Title :
Transient 3D Simulation of Single Event Latchup in Deep Submicron CMOS-SRAMs
Author :
Gawlina, Y. ; Borucki, L. ; Georgakos, G. ; Wachutka, G.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
Using transient 3D simulations we investigated single event latchups in SRAMs caused by cosmic radiation. The device structure considered comprises n-well, p-substrate, and source regions of NMOS and PMOS transistors fabricated in 65 nm technology. In particular, we analyzed the charge deposition and subsequent current flow caused by impinging ions with varying impact energy, device temperature, supply voltage and location of the ion impact in order to reveal the details of the failure and eventual destruction mechanisms.
Keywords :
CMOS memory circuits; MOSFET; SRAM chips; flip-flops; NMOS transistor; PMOS transistor; charge deposition analysis; cosmic radiation; deep submicron CMOS-SRAM; single event latchup; size 65 nm; supply voltage; transient 3D simulation; Discrete event simulation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290213
