DocumentCode
1943840
Title
Open Stencil Masks for Ion Projection Lithography
Author
Buchmann, L.M. ; Csepregi, L. ; Moller, P.
Author_Institution
Fraunhofer-Institut fÿr Mikrostrukturtechnik, Dillenburger Str. 53, D 1000 Berlin 33, West Germany
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
469
Lastpage
472
Abstract
A processing scheme for the manufacturing of an open stencil mask has been set up by application of silicon technology and only one single X-ray lithography step for pattern generation. The mask fabrication is fully adapted to the demands of an ion projection lithography equipment by IMS. It has been proved that this mask technology permits solid structures of a complex geometry with high pattern fidelity.
Keywords
Biomembranes; Boron; CMOS technology; Etching; Geometry; Resists; Silicon; Sulfur hexafluoride; Thermal stresses; X-ray lithography;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436874
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