Title :
Inversion channel HFET with unity current gain frequency of 14 GHz and surface emitting laser from a single epitaxial growth
Author :
Kiely, P.A. ; Evaldsson, P.A. ; Cooke, P. ; Taylor, C.W.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
High speed capability up to 14 GHz is reported for the inversion channel HFET utilizing the inversion channel device structure. The transistor is fabricated from the same epitaxial growth and with the same fabrication technology as previously used to demonstrate the vertical cavity Double Heterostructure Opto-Electronic Switching (DOES) Laser
Keywords :
epitaxial growth; field effect transistors; integrated optoelectronics; semiconductor lasers; 14 GHz; OEIC; epitaxial growth; fabrication technology; inversion channel HFET; surface emitting laser; transistor; unity current gain frequency; Dielectric substrates; Epitaxial growth; Etching; FETs; Frequency; HEMTs; MODFETs; Optical device fabrication; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303109
