DocumentCode
1943874
Title
A Fully Characterised Process for Titanium Silicide by RTA for One Micron CMOS
Author
Stogdale, N.F.
Author_Institution
Plessey Research Caswell Ltd., Caswell, Towcester, Northants., GB-NN12 8EQ, Great-Britain
fYear
1988
fDate
13-16 Sept. 1988
Abstract
A fully characterised process for self-aligned titanium silicide by RTA is described. Factors influencing formation; surface pre-clean, time-temperature schedules and ambient choice are all discussed. The sensitivity of the formation process to implanted arsenic is also described and a model presented for this effect. The technique is proven by its inclusion in a one-micron trench isolated CMOS process schedule and electrical results for devices and circuits thus fabricated are presented.
Keywords
Argon; CMOS process; Conductivity; Control systems; Nitrogen; Plasma temperature; Silicides; Surface cleaning; Thermal spraying; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436876
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