Title :
Metamorphic GaAs/AlAs Bragg mirrors deposited on InP for 1.3/1.55 /spl mu/m vertical cavity losers
Author :
Goldstein, L. ; Fortin, C. ; Salet, P. ; Plais, A. ; Jacquet, J. ; Rocher, A. ; Poussou, C.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
Abstract :
Long wavelength (1.3/1.5 /spl mu/m) GaAs-GaAlAs vertical cavity surface emitting lasers (VCSEL) with Bragg mirror (GaAs/AlAs) wafer fused on InP substrate exhibits low threshold current and cw operation at room temperature. However the wafer fusion technique requires additional substrate, epitaxy and technological steps. Furthermore the wafer fusion is difficult to achieve on a full 2 inches substrate. A new approach is proposed which consists in the metamorphic growth of GaAs-AlAs Bragg mirrors on InP by gas source molecular beam epitaxy.
Keywords :
III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; laser cavity resonators; laser mirrors; molecular beam epitaxial growth; optical fabrication; semiconductor lasers; surface emitting lasers; 1.3 mum; 1.55 mum; 2 in; Bragg mirror; GaAs-AlAs; GaAs-AlAs Bragg mirrors; GaAs-AlAs wafer; GaAs-GaAlAs; GaAs-GaAlAs vertical cavity surface emitting lasers; InP; InP substrate; additional substrate; cw operation; gas source molecular beam epitaxy; low threshold current; metamorphic GaAs-AlAs Bragg mirrors; metamorphic growth; room temperature; technological steps; vertical cavity losers; wafer fusion; wafer fusion technique; Gallium arsenide; Indium phosphide; Laser fusion; Mirrors; Substrates; Surface emitting lasers; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619100
