DocumentCode
1943902
Title
Modelling Diffusion in Silicides
Author
Moynagh, P B ; Brown, A.A. ; Rosser, P.J.
Author_Institution
STC Technology Ltd., London Road, Harlow, GB-Essex CM17 9NA, Great-Britain
fYear
1988
fDate
13-16 Sept. 1988
Abstract
This paper outlines models for the redistribution of dopant during the incorporation of silicides in VLSI processes.
Keywords
Annealing; Boron; Cobalt; Conductivity; Integrated circuit interconnections; Scanning electron microscopy; Semiconductor process modeling; Silicides; Silicon; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436878
Link To Document