Gate Current Calculations Using Spherical Harmonic Expansion of Boltzmann Equation

Author

Jin, Seonghoon ; Wettstein, Andreas ; Choi, Woosung ; Bufler, Fabian M. ; Lyumkis, Eugeny

Author_Institution

Synopsys Inc., Mountain View, CA, USA

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

1

Lastpage

4

Abstract

A physics-based gate current model has been developed based on nonequilibrium electron energy distributions obtained from the spherical harmonic expansion of the Boltzmann equation. The model accounts for band structure effects, relevant microscopic scattering mechanisms, and electron injections caused by tunneling and thermionic emission processes with parallel momentum conservation and image potential barrier lowering. Obtained distribution functions and injection currents agree well with Monte Carlo simulations and experiments.

Keywords

Boltzmann equation; Monte Carlo methods; band structure; thermionic emission; tunnelling; Boltzmann equation; Monte Carlo simulations; band structure effects; electron injections; gate current calculations; microscopic scattering mechanisms; nonequilibrium electron energy distributions; physics-based gate current model; spherical harmonic expansion; thermionic emission processes; tunneling; Acoustic scattering; Boltzmann equation; Brillouin scattering; Distribution functions; Electrons; Hot carrier injection; MOSFETs; Probability distribution; Thermionic emission; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on

Conference_Location

San Diego, CA

ISSN

1946-1569

Print_ISBN

978-1-4244-3974-8

Electronic_ISBN

1946-1569

Type

conf

DOI

10.1109/SISPAD.2009.5290216

Filename

5290216