Title :
Trial Application of Tight-Binding Method to Si-Cluster Surrounded by SiO2 in Optimized Atomistic Network: Si-Cluster Surrounded SiO2 is Quite Unique
Author :
Watanabe, Hiroshi ; Kawabata, Kenji ; Ichikawa, Takashi
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp. Shinsugita, Yokohama, Japan
Abstract :
A tight-binding method is applied to optimized Si-cluster surrounded by SiO2. As a result, it is found that the energy band structure is quite different from that of Si-substrate. It is regarded that the band-gap is invaded from the conduction band by intrinsic interfacial states.
Keywords :
conduction bands; elemental semiconductors; energy gap; interface states; semiconductor-insulator boundaries; silicon; silicon compounds; tight-binding calculations; Si; Si-SiO2; band-gap; conduction band; energy band structure; intrinsic interfacial states; optimized atomistic network; silicon cluster; tight-binding method; Conducting materials; Electrons; Insulation; Nonvolatile memory; Optimization methods; Photonic band gap; Semiconductor materials; Transistors; Transportation; Ultra large scale integration;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290217
