• DocumentCode
    1943921
  • Title

    Trial Application of Tight-Binding Method to Si-Cluster Surrounded by SiO2 in Optimized Atomistic Network: Si-Cluster Surrounded SiO2 is Quite Unique

  • Author

    Watanabe, Hiroshi ; Kawabata, Kenji ; Ichikawa, Takashi

  • Author_Institution
    Adv. LSI Technol. Lab., Toshiba Corp. Shinsugita, Yokohama, Japan
  • fYear
    2009
  • fDate
    9-11 Sept. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A tight-binding method is applied to optimized Si-cluster surrounded by SiO2. As a result, it is found that the energy band structure is quite different from that of Si-substrate. It is regarded that the band-gap is invaded from the conduction band by intrinsic interfacial states.
  • Keywords
    conduction bands; elemental semiconductors; energy gap; interface states; semiconductor-insulator boundaries; silicon; silicon compounds; tight-binding calculations; Si; Si-SiO2; band-gap; conduction band; energy band structure; intrinsic interfacial states; optimized atomistic network; silicon cluster; tight-binding method; Conducting materials; Electrons; Insulation; Nonvolatile memory; Optimization methods; Photonic band gap; Semiconductor materials; Transistors; Transportation; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4244-3974-8
  • Electronic_ISBN
    1946-1569
  • Type

    conf

  • DOI
    10.1109/SISPAD.2009.5290217
  • Filename
    5290217
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1943921