Title :
High speed monolithically integrated pin-MODFET transimpedance photoreceivers
Author :
Gutierrez-Aitken, A.L. ; Bhattacharya, P. ; Chen, Y.C. ; Pavlidis, D. ; Brock, T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The performance characteristics of transimpedance and transimpedance/voltage photoreceivers using an In0.53Ga0.47As p-i-n photodiode integrated with a 0.1 μm gate length regrown pseudomorphic In0.60Ga0.40 As MODFET realized by MBE have been investigated. The photodiode exhibits very low dark current and a responsivity of 0.6 A/W at λ=1.55 μm. The regrown MODFETs have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 mA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver with a transimpedance amplifier exhibits a FWHM value of 90 ps and a transimpedance gain of 45 dBΩ with a 800 Ω feedback resistor. This photoreceiver demonstrated 24 dB optical-to-electrical conversion gain at 9.3 GHz. The photoreceiver with a transimpedance/voltage amplifier shows a FWHM of 200 ps and a transimpedance gain of 63 dBΩ with a 1.2 KΩ feedback resistor
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical receivers; p-i-n photodiodes; semiconductor epitaxial layers; semiconductor growth; 0.1 micron; 1.5 V; 1.55 micron; 200 ps; 24 dB; 90 ps; FWHM value; InGaAs; MBE; channel currents; dark current; drain bias; extrinsic transconductance values; feedback resistor; optical-to-electrical conversion gain; p-i-n photodiode; pin-MODFET transimpedance photoreceivers; regrown pseudomorphic In0.60Ga0.40As MODFET; temporal response; transimpedance gain; transimpedance/voltage photoreceivers; Current measurement; Dark current; HEMTs; MODFETs; Optical amplifiers; Optical feedback; PIN photodiodes; Resistors; Transconductance; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303111
