Title :
High-speed vertical cavity surface emitting lasers
Author :
Lear, K.L. ; Ochiai, M. ; Hietala, V.M. ; Hou, H.Q. ; Hammons, B.E. ; Banas, J.J. ; Nevers, J.A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
We have previously demonstrated record modulation bandwidths for oxide-confined vertical cavity surface emitting lasers (VCSELs) based on strained InGaAs-GaAs quantum wells. The monolithic oxide-confined structure provides good optical confinement, low thresholds, efficient operation, and acceptable thermal resistance; these qualities promote high speed operation. Here we report work on nominally 850 nm wavelength oxide-confined VCSELs with modulation bandwidths in excess of 20 GHz.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; laser cavity resonators; laser mirrors; laser transitions; quantum well lasers; surface emitting lasers; 20 GHz; 850 nm; InGaAs-GaAs; VCSELs; acceptable thermal resistance; efficient operation; good optical confinement; high speed operation; high-speed vertical cavity surface emitting lasers; low thresholds; modulation bandwidths; monolithic oxide-confined structure; oxide-confined vertical cavity surface emitting lasers; strained InGaAs-GaAs quantum wells; wavelength oxide-confined VCSELs; Bandwidth; High speed optical techniques; Optical modulation; Optical surface waves; Quantum well lasers; Stimulated emission; Surface emitting lasers; Surface resistance; Thermal resistance; Vertical cavity surface emitting lasers;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619101
