DocumentCode
1943930
Title
Effects of Compound Formation with Dopants in TaSi2
Author
Probst, V. ; Kabza, H. ; Goebel, H.
Author_Institution
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, F.R.G.; Deparment of Integrated Circuits, Technical University Munich
fYear
1988
fDate
13-16 Sept. 1988
Abstract
TaB2 compound formation in TaSi2 is demonstrated by means of SEM, SIMS-and XRD analysis. This holds for B-doping of TaSi2 by means of diffusion from poly-Si as well as for direct implantation. The formation of TaAs could not yet be proven. As the mobile boron concentration level in TaSi2 is low due to the compound formation diffusion from TaSi2 into Si is rather limited.
Keywords
Annealing; Boron; Conductivity; Doping; Heat treatment; Research and development; Silicides; Thermodynamics; Titanium; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436879
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